X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1−xGex, Si1−yCy, and Si1−x−yGexCy on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118998
Reference12 articles.
1. Characterization of Si/Si1−xGex/Si quantum wells by space-charge spectroscopy
2. Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy
3. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
4. Determination of a natural valence-band offset: The case of HgTe-CdTe
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