Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370693
Reference19 articles.
1. Properties of Gallium Nitride
2. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
3. Progress and prospects for GaN and the III–V nitride semiconductors
4. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
5. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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