Passivation of Mn acceptors in GaMnAs-Reference-Cited by-同舟云学术

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Passivation of Mn acceptors in GaMnAs

Published:2004-03-29 Issue:13 Volume:84 Page:2277-2279
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Brandt M. S.,Goennenwein S. T. B.,Wassner T. A.,Kohl F.,Lehner A.,Huebl H.,Graf T.,Stutzmann M.,Koeder A.,Schoch W.,Waag A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1690470

Reference24 articles.

1. Hydrogen-boron interactions inp-type diamond

2. Deactivation of the boron acceptor in silicon by hydrogen

3. Hydrogen passivation of shallow-acceptor impurities inp-type GaAs

4. Hole Compensation Mechanism of P-Type GaN Films

5. Hydrogenation of wide‐band‐gap II‐VI semiconductors

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