Temperature dependence of photoluminescence from germanium‐doped and undoped gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662077
Reference22 articles.
1. Radiative Lifetimes of Donor-Acceptor Pairs inp-Type Gallium Arsenide
2. The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide
3. Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions
4. Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions
5. Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Empirical relationship between hall mobility and hole concentration in heavily doped p-type GaAs;Crystal Research and Technology;1990-11
2. Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs;Journal of Applied Physics;1983-12
3. Temperature distribution in Gunn diodes and GaAs MESFET's determined by micro-photoluminescence;IEEE Transactions on Electron Devices;1978-01
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