Aspects of the a-TiOx memristor active medium technology-Reference-Cited by-同舟云学术

Aspects of the a-TiOx memristor active medium technology

Published:2018-11-28 Issue:20 Volume:124 Page:205109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Palagushkin A. N.¹,Roshchupkin D. V.²^ORCID,Yudkin F. A.¹,Irzhak D. V.²,Keplinger Olga³,Privezentsev V. V.¹^ORCID

Affiliation:

1. Federal State Institution, Scientific Research Institute for System Analysis of the Russian Academy of Sciences, Nakhimovskiy pr., 36-1, 117218 Moscow, Russia

2. Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, 142432 Moscow District, Russia

3. Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

Funder

Ministry of Science and High Education of Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5038919

Reference19 articles.

1. Memristor Networks

2. Advances in Memristors, Memristive Devices and Systems

3. On the Mathematical Modeling of Memristor, Memcapacitor, and Meminductor

4. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

5. Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaO x -Based Memory Platform

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