Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers-Reference-Cited by-同舟云学术

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Published:2016-03-07 Issue:10 Volume:108 Page:102404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Piquemal-Banci M.,Galceran R.^ORCID,Caneva S.^ORCID,Martin M.-B.,Weatherup R. S.,Kidambi P. R.^ORCID,Bouzehouane K.,Xavier S.,Anane A.,Petroff F.,Fert A.,Robertson J.,Hofmann S.,Dlubak B.,Seneor P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943516

Reference27 articles.

1. The emergence of spin electronics in data storage

2. Future hard disk drive systems

3. Basic principles of STT-MRAM cell operation in memory arrays

4. Electronic dispersion relations of monolayer hexagonal boron nitride formed on the Ni(111) surface

5. Graphene grown on Co(0001) films and islands: Electronic structure and its precise magnetization dependence

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