Band bending of LiF/Alq3 interface in organic light-emitting diodes-Reference-Cited by-同舟云学术

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Band bending of LiF/Alq3 interface in organic light-emitting diodes

Published:2003-10-06 Issue:14 Volume:83 Page:2949-2951
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ihm Kyuwook,Kang Tai-Hee,Kim Ki-Jeong,Hwang Chan-Cuk,Park Yong-Jun,Lee Ki-Bong,Kim Bongsoo,Jeon Cheol-Ho,Park Chong-Yun,Kim Kibeom,Tak Yoon-Heung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1616977

Reference15 articles.

1. Electroluminescence of doped organic thin films

2. Confinement of charge carriers and molecular excitons within 5‐nm‐thick emitter layer in organic electroluminescent devices with a double heterostructure

3. Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode

4. Photoelectron spectroscopy study of the electronic structures of Al/MgF2/tris-(8-hydroxyquinoline) aluminum interfaces

5. Tris-(8-hydroxyquinoline)aluminum-based organic light-emitting devices with Al/CaF2 cathode: Performance enhancement and interface electronic structures

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3. Organic light-emitting diodes based on sodium chloride buffer layer;SCIENTIA SINICA Physica, Mechanica & Astronomica;2017-10-20

4. Protective Oxide Coating for Ionic Conductive Solid Electrolyte Interphase;ACS Applied Materials & Interfaces;2016-11-07

5. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes;Journal of Science: Advanced Materials and Devices;2016-09

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