Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping
Author:
Affiliation:
1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
2. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transport spectroscopy from Hubbard bands of dopant-induced quantum dot array to one-dimensional conduction subband;Journal of Physics D: Applied Physics;2022-08-05
2. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure;Applied Physics Letters;2018-06-04
3. (Invited) Evaluation of Coupled Triple Quantum Dots with Compact Device Structure;ECS Transactions;2017-08-01
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