Ohmic contacts ton‐GaAs using In/Pd metallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98429
Reference9 articles.
1. Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case
2. Insitucontacts to GaAs based on InAs
3. The role of compound formation and heteroepitaxy in indium‐based ohmic contacts to GaAs
4. In/Pt ohmic contacts to GaAs
5. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
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3. Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods;Applied Surface Science;2007-01
4. Dislocation-induced nonuniform interfacial reactions of Ti∕Al∕Mo∕Au ohmic contacts on AlGaN∕GaN heterostructure;Applied Physics Letters;2005-10-03
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