Homoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102338
Reference18 articles.
1. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
2. Formation of thin films of CoSi2: Nucleation and diffusion mechanisms
3. Cobalt disilicide epitaxial growth on the silicon (111) surface
4. Structure and Nucleation Mechanism of Nickel Silicide on Si(111) Derived from Surface Extended-X-Ray-Absorption Fine Structure
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