X‐ray topographic observation of dislocation generation and propagation in InP single crystal grown by the liquid‐encapsulated Czochralski technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332073
Reference10 articles.
1. Impurity effect on grown‐in dislocation density of InP and GaAs crystals
2. A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals
3. Growth of Dislocation-Free Undoped InP Crystals
4. Growth of Dislocation-Free Undoped InP Crystals
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1. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz);Progress in Crystal Growth and Characterization of Materials;2001-01
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