Kinetics of formation and dissociation of a dominant native defect (EL2) in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348404
Reference20 articles.
1. Study on fundamental defects and their effect on GaAs device properties
2. Generation Kinetics of EL2 Centers in GaAs
3. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
4. Characteristics of GaAs with inverted thermal conversion
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2. Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects;Journal of Applied Physics;2001-05
3. Investigation of Electronic Surface States and its Correlation to Surface Modifications in Femtosecond UV-Laser Treated n(100) GaAs;MRS Proceedings;1999
4. Influence of CH4/H2 reactive ion etching on the deep levels of Si-doped AlxGa1−xAs (x=0.25);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
5. Modifications of the three-dimensional transport properties of Si-doped Al0.25Ga0.75As exposed to CH4/H2 reactive ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
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