Hydrogen passivation of impurities in GaP as studied by photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343516
Reference18 articles.
1. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
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3. Proton Tunneling with Millielectrovolt Energies at the Be-H Acceptor Complex in Silicon
4. Theory of hydrogen passivation of shallow-level dopants in crystalline silicon
5. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
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1. Vibrational Absorption Associated with Hydrogen;Springer Series in Solid-State Sciences;2011-10-27
2. Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy;Journal of Applied Physics;2006-08-15
3. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
4. Complexes of group-VI donors with hydrogen in GaP;Physica B: Condensed Matter;1999-12
5. On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs;physica status solidi (a);1997-01
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