Observation of giant photocurrent gain in highly doped (In,Ga)N∕GaN multiple-quantum-well-based photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2942384
Reference18 articles.
1. Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology
2. Laser technology
3. Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device
4. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
5. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors;Optics Express;2020-07-27
2. Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance;IEEE Journal of Quantum Electronics;2009-06
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