The effect of hydrogen on the properties of Mg0.1Zn0.9O thin film

Abstract

Opto-electrical properties of MgxZn1−xO can be tuned by adjusting the value of x, but phase separation occurs when x is greater than 0.4. Hydrogen acts as a shallow donor in MgxZn1−xO and can play an important role in tuning the opto-electrical properties in a way that avoids phase separation. Mg0.1Zn0.9O (MZO) films were prepared at different hydrogen partial pressures and their structures and properties were studied. XRD results show that the MZO film has a wurtzite structure with a preferential orientation along the c-axis, but the crystallinity declines with increasing hydrogen partial pressure. Stress in the MZO film changes from tensile to compressive as the hydrogen partial pressure increases. Increasing the hydrogen partial pressure improves the conductivity and increases the optical bandgap, but the electronic affinity of MZO decreases, according to ultraviolet photoelectron spectroscopy results. These key parameters were used to simulate a device with a TCO/MZO/CdTe/ZnTe:Cu type structure, in which TCO is the transparent conductive oxide. The highest efficiency of 17.37% was achieved when the electron affinity of the MZO film was 3.71 eV, corresponding to a spark-like band offset of 0.29 eV at the MZO/CdTe interface. These results suggest that the electron affinity of MZO can be tuned to achieve an optimal band alignment in the device.