Limit of validity of the thermionic‐field‐emission treatment of electron injection across emitter‐base junctions in abrupt heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Limit of validity of the thermionic‐field‐emission treatment of electron injection across emitter‐base junctions in abrupt heterojunction bipolar transistors

Published:1995-06 Issue:11 Volume:77 Page:5786-5792
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kumar T.,Cahay M.,Shi S.,Roenker K.,Stanchina W. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359224

Reference16 articles.

1. A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors

2. Monte Carlo evaluation of electron transport in heterojunction bipolar transistor base structures

3. Transient Monte Carlo analysis and application to heterojunction bipolar transistor switching

4. Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistors

5. A model-based comparison of AlInAs/GaInAs and InP/GaInAs HBT's: a Monte Carlo study

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo modelling of abrupt InP/InGaAs HBTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2003-05-06

2. A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTs;IEEE Transactions on Electron Devices;2001-06

3. Effects of the emitter-base effective-mass difference on the collector current in InP/InGaAs HBTs;Microelectronic Engineering;2000-05

4. Ensemble Monte Carlo analysis of self-heating effects in graded heterojunction bipolar transistors;Journal of Applied Physics;1998-02-15

5. Hole tunneling through the emitter-base junction of a heterojunction bipolar transistor;Physical Review B;1997-08-15