Post deposition annealing effect on the properties of Al2O3/InP interface-Reference-Cited by-同舟云学术

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Post deposition annealing effect on the properties of Al2O3/InP interface

Published:2018-02 Issue:2 Volume:8 Page:025211
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kim Hogyoung¹,Kim Dong Ha²,Choi Byung Joon²

Affiliation:

1. Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul 139-743, Korea

2. Departmet of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul 139-743, Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5019856

Reference26 articles.

1. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

2. Capacitance-voltage characterization of GaAs–Al2O3 interfaces

3. GaAs interfacial self-cleaning by atomic layer deposition

4. Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

5. Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of scaling effect of ferroelectric gate stack in planar InGaAs MOSFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-08-19

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