Spatial profiles of neutral, ion, and etch uniformity in a large-area high-density plasma reactor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1335620
Reference14 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. Two-dimensional direct simulation Monte Carlo (DSMC) of reactive neutral and ion flow in a high density plasma reactor
3. Direct simulation Monte Carlo analysis of flows and etch rate in an inductively coupled plasma reactor
4. Studies of the low-pressure inductively-coupled plasma etching for a larger area wafer using plasma modeling and Langmuir probe
5. Measurement of radial neutral pressure and plasma density profiles in various plasma conditions in large-area high-density plasma sources
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