EFFICIENT PHOTOEMISSION FROM Ge‐DOPED GaAs GROWN BY LIQUID‐PHASE EPITAXY
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653590
Reference11 articles.
1. GaAs-Cs: A new type of photoemitter
2. Factors affecting the photoemission from caesium oxide covered GaAs
3. EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACES
4. Efficient photoemission from GaAs epitaxial layers
5. Luminescence due to Ge Acceptors in GaAs
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