Real‐space transfer in three‐terminal InGaAs/InAlAs/InGaAs heterostructure devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102889
Reference16 articles.
1. Novel real-space hot-electron transfer devices
2. A field-effect transistor with a negative differential resistance
3. Charge injection transistor based on real-space hot-electron transfer
4. Hot electron injection devices
5. High‐frequency amplification and generation in charge injection devices
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