Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications-Reference-Cited by-同舟云学术

Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications

Published:2018-12-07 Issue:21 Volume:124 Page:214901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Boppidi Pavan Kumar Reddy¹,Raj P. Michael Preetam¹,Challagulla Swapna²,Gollu Sankara R.³,Roy Sounak²,Banerjee Souri⁴,Kundu Souvik¹

Affiliation:

1. Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science (BITS) Pilani, Hyderabad Campus, Hyderabad 500078, India

2. Department of Chemistry, Birla Institute of Technology and Science (BITS) Pilani, Hyderabad Campus, Hyderabad 500078, India

3. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

4. Department of Physics, Birla Institute of Technology and Science (BITS) Pilani, Hyderabad Campus, Hyderabad 500078, India

Funder

Board of Research in Nuclear Sciences

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052619

Reference56 articles.

1. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

2. Resistance switching memory in perovskite oxides

3. Oxygen vacancy assisted multiferroic property of Cu doped ZnO films

4. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

5. Mechanism for bistability in organic memory elements

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