Impact ionization coefficients in In0.2Ga0.8As/GaAs strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97174
Reference8 articles.
1. Defects in epitaxial multilayers
2. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
3. Minority‐carrier diffusion lengths in GaP/GaAsxP1−xstrained‐layer superlattices
4. Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief review
5. Electroabsorption produced mixed injection and its effect on the determination of ionization coefficients
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1. Off-State Breakdown Modeling for High-Schottky-Barrier δ-Doped In0.49Ga0.51P/In0.25Ga0.75As/InP High Electron Mobility Transistor;Japanese Journal of Applied Physics;2003-07-15
2. Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs;Semiconductor Science and Technology;2001-03-27
3. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
4. Enhanced breakdown voltages in strained InGaAs/GaAs structures;Applied Physics Letters;1992-10-26
5. Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes;Journal of Electronic Materials;1991-04
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