Interlayer coupling-induced controllable negative differential thermal resistance in graphene/h-BN van der Waals heterostructure

Author:

Chen Xue-Kun1ORCID,Tan Jia-Ling1,Pang Min1,Xie Zhong-Xiang2ORCID,Zhou Wu-Xing3,Liu Jun1

Affiliation:

1. School of Mathematics and Physics, University of South China, Hengyang 421001, China

2. Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, China

3. School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China

Abstract

The van der Waals (vdW) heterostructures employing graphene and hexagonal boron nitride (h-BN) have emerged as a typical system for building emergent two-dimensional devices, such as atomically thin transistors or capacitors. Herein, we study the nonlinear thermal transport in such vdW heterostructure by non-equilibrium molecular dynamics simulations. The results show that an obvious negative differential thermal resistance (NDTR) phenomenon can be observed under small temperature bias when the interlayer coupling becomes stronger. The vibrational spectra analysis manifests that the phonon filtering mechanism induced by interlayer coupling greatly hinders the interfacial thermal transport. To obtain the optimum conditions, the dependence of NDTR on the system length, lateral width, external temperature, and defect density is taken into account. Our findings extend the phonon filtering mechanism to thermal information processing.

Funder

National Natural Science Foundation of China

Education Department of Hunan Province

Natural Science Foundation of Hunan Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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