Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor-Reference-Cited by-同舟云学术

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Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

Published:2004-01-26 Issue:4 Volume:84 Page:520-522
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohashi Hirotaka,Tanigaki Katsumi,Kumashiro Ryotaro,Sugihara Syuji,Hiroshiba Shinya,Kimura Shigeru,Kato Kenichi,Takata Masaki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1638882

Reference10 articles.

1. Organic thin-film transistors: A review of recent advances

2. Conducting films of C60 and C70 by alkali-metal doping

3. The large Debye–Scherrer camera installed at SPring-8 BL02B2 for charge density studies

4. Orientational ordering transition in solidC60

5. Response to ‘‘Comment on ‘Crystal growth of C60thin films on layered substrates’ ’’ [Appl. Phys. Lett.65, 378 (1994)]

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