Further insight into the temperature quenching of photoluminescence from InAs∕GaAs self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2913179
Reference49 articles.
1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
2. Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
4. Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers
5. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
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