Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel-Reference-Cited by-同舟云学术

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Published:2021-10-04 Issue:14 Volume:119 Page:143503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nguyen Trung Huu¹^ORCID,Takahashi Tokio¹,Chonan Hiroshi¹,Van Nguyen Hoang¹,Yamada Hisashi¹^ORCID,Yamada Toshikazu¹^ORCID,Shimizu Mitsuaki¹

Affiliation:

1. The National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8560, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0064935

Reference32 articles.

1. Analysis of the reverse I-V characteristics of diamond-based PIN diodes

2. M. Saremi , “ Modeling and simulation of the programmable metallization cells (PMCs) and diamond-based power devices,” Ph.D. dissertation ( Arizona State University, 2017).

3. Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

4. Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC

5. Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

2. Calculation of Thermal Conductivity of AlGaN/GaN Superlattices;physica status solidi (b);2023-04-24