Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP-Reference-Cited by-同舟云学术

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

Published:2018-04-28 Issue:16 Volume:123 Page:161534
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ferrandis Philippe¹²³^ORCID,Billaud Mathilde¹²⁴,Duvernay Julien¹²,Martin Mickael⁴,Arnoult Alexandre⁵⁶,Grampeix Helen¹²,Cassé Mikael¹²,Boutry Hervé¹²,Baron Thierry⁴,Vinet Maud¹²,Reimbold Gilles¹²

Affiliation:

1. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

2. Univ. Grenoble Alpes, F-38000 Grenoble, France

3. Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 83957 La Garde, France

4. Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France

5. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France

6. Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France

Funder

French "Recherches Technologiques de Base" program

H2020 Program INSIGHT

LabEx Minos

NANO 2017 program

RENATECH program

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5007920

Reference33 articles.

1. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

2. Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

3. Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

4. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility;Advanced Electronic Materials;2024-06-18

2. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments;ECS Journal of Solid State Science and Technology;2021-09-01

3. Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application;Journal of Luminescence;2021-06

4. In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes;IEEE Transactions on Nuclear Science;2020-09

5. Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates;Physical Review Applied;2020-08-31