Over 100% magnetoresistance ratio at room temperature in magnetic tunnel junctions with CuGaSe2 spacer layer
Author:
Affiliation:
1. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5092269
Reference30 articles.
1. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
2. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
3. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
4. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
5. Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions
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