Layer characterization and photovoltaic properties of CdS/multi-wall carbon nanotube/n-Si device with an n-p-n transistor structure-Reference-Cited by-同舟云学术

Layer characterization and photovoltaic properties of CdS/multi-wall carbon nanotube/n-Si device with an n-p-n transistor structure

Published:2016-01 Issue:1 Volume:8 Page:013101
ISSN:1941-7012
Container-title:Journal of Renewable and Sustainable Energy
language:en
Short-container-title:Journal of Renewable and Sustainable Energy

Author:

Mohammed Muatez¹²^ORCID,Li Zhongrui³,Chen Tar-pin¹

Affiliation:

1. Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA and GREEN Solar Cell Research Center, Little Rock, Arkansas 72204, USA

2. College of Science, University of Al-Qadisiya, Al-Qadisiyah 58002, Iraq

3. Electronic Microbeam Analysis Laboratory, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Renewable Energy, Sustainability and the Environment

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939506

Reference37 articles.

1. Double-sided n+-p-n+ solar cell for bifacial concentration

2. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

3. Growth of ZnO nanowires on modified well-aligned carbon nanotube arrays

4. TiO2−Multiwalled Carbon Nanotube Heterojunction Arrays and Their Charge Separation Capability

5. Electrodeposition of TiO2Nanoparticles on Multiwalled Carbon Nanotube Arrays for Hydrogen Peroxide Sensing

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