Interfacial capacitance between a ferroelectric Fe3O4 thin film and a semiconducting Nb:SrTiO3 substrate
Author:
Affiliation:
1. Institute for Solid State Physics, University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
2. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905384
Reference57 articles.
1. The Verwey transition - a topical review
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