Evaluation of the feasibility of a far‐infrared laser based on intersubband transitions in GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101812
Reference10 articles.
1. Thermal profiles during recrystallization of silicon on insulator with scanning incoherent light line sources
2. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
3. Observation of grating‐induced intersubband emission from GaAs/AlGaAs superlattices
4. Time-resolved Raman scattering in GaAs quantum wells
5. Intersubband relaxation in GaAs-AlxGa1−xAs quantum well structures observed directly by an infrared bleaching technique
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