Self-powered filterless narrowband AgNWs@ZnO:Ga/AlN/InGaN heterojunction photodetector for ultraviolet light intensimeter application

Author:

Yu Mengxin1,He Siyuan1,Liu Jinguo1,Li Wenjie1,Chen Mengdan1,Cheng Dongping1,Zhai Yalin1,Shi Daning1,Kan Caixia1ORCID,Jiang Mingming1ORCID

Affiliation:

1. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106, China

Abstract

Self-powered high-performance photodetectors (PDs) featuring specific wavelengths are currently in high demand across various optoelectronic fields. Herein, we present a filter-free and self-biased narrowband PD, which contained a one-dimensional Ga-doped ZnO micro-crystal with surface-coated Ag nanowires, an InGaN film, and an AlN layer. The PD exhibits superior performance, containing a responsivity of 268.0 mA/W and a detectivity of 8.05 × 1011 Jones at 360 nm. Particularly for its narrowband photodetection (≤30 nm) and rapid response speed (100/700 μs), the PD enabled the development of a highly sensitive ultraviolet light intensimeter for monitoring weak signals (4–1500 μW/cm2) in combination with specially designed back-end circuits. Given its compact size and low relative error (≤1.5%), the rational design strategy can also be extended to other light detection systems, opening up a constructive way for the development of low-cost, high-sensitivity narrowband light detection.

Funder

National Natural Science Foundation of China

Postgraduate Research & Practice Innovation Program of NUAA

Publisher

AIP Publishing

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