Short‐circuit current of polycrystalline silicon solar cells with respect to grain size and grain‐boundary recombination velocity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336630
Reference10 articles.
1. Grain size dependence of the photovoltaic properties of solar grade polysilicon
2. Editorial
3. On the transport theory of Schottky barriers to polycrystalline silicon thin films
4. Efficiency calculations for thin-film polycrystalline semiconductor p-n junction solar cells
5. Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells
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1. Growth behavior of faceted Si crystals at grain boundary formation;Journal of Crystal Growth;2009-12
2. A novel method for the estimation of surface recombination velocity of polycrystalline CIGS solar cells;SYNTH REACT INORG M;2008
3. Effective Diffusion Length of Multicrystalline Solar Cells;Solid State Phenomena;1999-04
4. Effective diffusion length of multicrystalline solar cells;Semiconductor Science and Technology;1998-07-01
5. Analysis of the effect of a uniform base drift field on the performance of a polycrystalline p/n junction solar cell;Solid-State Electronics;1990-02
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