Measuring the hole chemical potential in ferromagnetic Ga1−xMnxAs∕GaAs heterostructures by photoexcited resonant tunneling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2709624
Reference16 articles.
1. Theory of ferromagnetic (III,Mn)V semiconductors
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4. Making Nonmagnetic Semiconductors Ferromagnetic
5. Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium Arsenide
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1. Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes;Journal of Physics D: Applied Physics;2016-03-24
2. Dilute ferromagnetic semiconductors: Physics and spintronic structures;Reviews of Modern Physics;2014-03-24
3. GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations;Applied Physics Letters;2012-05-14
4. Electronic energy levels, wavefunctions and potential landscape of nanostructures probed by magneto-tunnelling spectroscopy;Journal of Physics: Conference Series;2011-12-28
5. Nanoscale Potential Fluctuations in (GaMn)As/GaAs Heterostructures: From Individual Ions to Charge Clusters and Electrostatic Quantum Dots;Nano Letters;2010-11-01
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