Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays-Reference-Cited by-同舟云学术

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

Published:2021-08-02 Issue:5 Volume:119 Page:051906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yu C.¹^ORCID,Andalib P.¹,Sokolov A.²,Fitchorova O.³,Liang W.³,Beam E.⁴,Harris V. G.¹⁵^ORCID

Affiliation:

1. Center for Microwave Magnetic Materials and Integrated Circuits (CM3IC), Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA

2. Metamagnetics Inc., Westborough, Massachusetts 01581, USA

3. Kostas Research Institute at Northeastern University, LLC, Burlington, Massachusetts 01803, USA

4. Qorvo Inc., Richardson, Texas 75080, USA

5. Department of Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, USA

Funder

Army Research Office

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058784

Reference34 articles.

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3. The Self-Biased Circulator: Ferrite Materials Design and Process Considerations

4. See https://www.mtmgx.com/rf-microwave-smt-circulators-isolators/ for product and performance information regarding self-biased circulators. (last retrieved May 25, 2021).

5. V. Harris and Z. Chen , “ Growth of high quality low-loss ferrite materials on wide bandgap semiconductor substrates,” U.S. patent 8,029,921 (4 Oct. 2011).

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