Type II transition in InSb-based nanostructures for midinfrared applications-Reference-Cited by-同舟云学术

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Type II transition in InSb-based nanostructures for midinfrared applications

Published:2008-06 Issue:11 Volume:103 Page:114516
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Intartaglia R.,Rainó G.,Tasco V.,Della Sala F.,Cingolani R.,Baranov A. N.,Deguffroy N.,Tournié E.,Satpati B.,Trampert A.,De Giorgi M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2938063

Reference15 articles.

1. Mid-infrared Semiconductor Optoelectronics

2. Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular‐beam epitaxy

3. Strained‐layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy

4. Photoluminescence from single InSb quantum wells

5. InSb∕AlxIn1−xSb quantum-well light-emitting diodes with high internal quantum efficiencies

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A DFT study of structural, electronic, vibrational and optical properties of InxSby (x + y = 2–5) nanocluster;Materials Today: Proceedings;2021

2. Energy dependence of nanopillars formation on InSb semiconductor surfaces under gallium FIB and noble gas ions beam irradiation;Applied Surface Science;2015-02

3. Analytic determination of the dielectric function of InSb at energies from 0.74 to 6.42 eV at temperatures from 31 to 675 K;Journal of the Korean Physical Society;2014-06

4. Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675 K;Journal of Applied Physics;2013-09-14

5. Tuning of mid-infrared emission of ternary PbSrTe/CdTe quantum dots;Applied Physics Letters;2012-03-12

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