Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109635
Reference11 articles.
1. Gallium arsenide thin films by low‐temperature photochemical processes
2. Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopy
3. Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)
4. Insitux‐ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface Kinetics and Mechanism of Atomic Layer Epitaxy of GaAs Using Trimethylgallium;Advances in the Understanding of Crystal Growth Mechanisms;1999
2. Pulsed trimethylgallium scattering from As-stabilized and Ga-stabilized surfaces;Applied Surface Science;1994-12
3. Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium;Applied Surface Science;1994-12
4. Adsorption of carbon-related species onto GaAs(001), (011), and (111) surfaces exposed to trimethylgallium;Journal of Crystal Growth;1994-03
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