Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels-Reference-Cited by-同舟云学术

Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Published:2014-06-16 Issue:24 Volume:104 Page:243505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bolat S.,Ozgit-Akgun C.,Tekcan B.,Biyikli N.,Okyay A. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4884061

Reference21 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

3. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

4. High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

5. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Ydkokawa, M. Yokoyama, N. Adachi, and M. Takikawa, presented at the IEEE International Electron Devices Meeting, IEDM '03 Technical Digest, 2003.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition;Materials Letters;2023-11

2. Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes;Coatings;2021-12-07

3. The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD;Applied Surface Science;2021-11

4. Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate;Applied Physics A;2020-05-25

5. Thermal Atomic Layer Deposition of Polycrystalline Gallium Nitride;The Journal of Physical Chemistry C;2019-09-06