Thermoelectric response of Janus monolayer M2P2S3Se3 (M = Zn and Cd)

Abstract

Thermoelectric transport properties of Janus monolayers M2P2S3Se3 (M = Zn and Cd) are investigated by the first-principles based transport theory. The Zn2P2S3Se3 and Cd2P2S3Se3 monolayers are indirect-gap semiconductors. The high polarizability of M-Se/S bonds in the MS3Se3 distorted octahedrons leads to anharmonic phonon behavior, which produces an intrinsic lattice thermal conductivity (κl) as low as 1.06 and 1.99 W m−1 K−1 at 300 K for Zn2P2S3Se3 and Cd2P2S3Se3 monolayers, respectively. The lower κl of the Zn2P2S3Se3 monolayer is mainly attributed to more pronounced flat modes of the phonon dispersion in a frequency range of 1–1.7 THz caused by the softer Zn–Se/S bonds. The polar optical phonon scattering of carriers surprisingly plays a dominant role in carrier transport of both the monolayers, which greatly suppresses the electrical conductivity and thereby the power factor by about an order of magnitude. The predicted figure of merit (zT) increases monotonically with the temperature at the optimal carrier density, and at the operating temperature of 1200 K, it reaches an optimal value of 0.86 at an optimal electron density of ∼1.5×1013 cm−2 for the n-type Zn2P2S3Se3 monolayer and 0.30 at an optimal electron density of ∼7×1012 cm−2 for the n-type Cd2P2S3Se3 monolayer.