Diode effect in all-oxide Sr2FeMoO6-based magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2170070
Reference7 articles.
1. Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure
2. Experimental evidence of the ferrimagnetic ground state of Sr 2 FeMoO 6 probed by X-ray magnetic circular dichroism
3. Tunnel magnetoresistance in nanojunctions based on Sr2FeMoO6
4. Pressure effect on the magnetization of Sr2FeMoO6 thin films grown by pulsed laser deposition
5. Effects of strain relaxation on the electronic properties of epitaxial Sr2FeMoO6 grown by pulsed laser deposition on SrTiO3 (001)
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1. Magnetoresistance and Hall effect caused by Berry curvature in Sr2FeMoo6−δ double perovskite;Journal of Physical Studies;2023
2. Strontium Ferromolybdate-Based Magnetic Tunnel Junctions;Applied Sciences;2022-03-05
3. Double Perovskite Sr2FeMoO6: A Potential Candidate for Room Temperature Magnetoresistance Device Applications;Magnetic Sensors - Development Trends and Applications;2017-11-29
4. Formation of two-dimensional ordered nanodomains and curious properties of Sr3FeMoO7;Journal of Materials Chemistry C;2015
5. Ab initiostudy of the electronic and magnetic properties of Sr2−xLaxFe1+y/2Mo1−y/2O6double perovskites;Journal of Physics: Condensed Matter;2012-01-06
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