Thickness dependence of ferromagnetic- and metal-insulator transition in thin EuO films-Reference-Cited by-同舟云学术

Thickness dependence of ferromagnetic- and metal-insulator transition in thin EuO films

Published:2009-04 Issue:7 Volume:105 Page:07C917
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Müller Martina,Miao Guo-Xing,Moodera Jagadeesh S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3063673

Reference10 articles.

1. The phenomena of spin-filter tunnelling

2. Exchange Splitting and Charge Carrier Spin Polarization in EuO

3. Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN

4. P. Wachter, in Handbook of the Physics and Chemistry of Rare Earths, edited by K. Schneider and L. Eyring (North-Holland, New York, 1979), Vol. 2, p. 507.

5. Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

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