Excitonic electroluminescence at room temperature in an (In,Ga)As multiple-quantum-well diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3464559
Reference15 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Confined carrier quantum states in ultrathin semiconductor heterostructures
3. Free excitons in room-temperature photoluminescence of GaAs-AlxGa1−xAsmultiple quantum wells
4. Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure
5. The excitonic properties and temperature behaviour of the photoluminescence from GaAs-GaAlAs multiple quantum well structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures;Journal of Applied Physics;2016-10-14
2. Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well system;Journal of Crystal Growth;2011-05
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