Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser‐threshold‐current temperature sensitivity-Reference-Cited by-同舟云学术

Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser‐threshold‐current temperature sensitivity

Published:1981-02-15 Issue:4 Volume:38 Page:193-195
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uji T.,Iwamoto K.,Lang R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.92317

Reference6 articles.

1. In1-xGaxAsyP1-y/InP DH lasers fabricated on InP

2. The temperature dependence of threshold current for double‐heterojunction lasers

3. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers

4. Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers

5. Carrier density dependence of Auger recombination

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