Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1845588
Reference10 articles.
1. A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT<tex>$hbox HfO_2$</tex>by Using HfN Replacement Gate
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