Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states-Reference-Cited by-同舟云学术

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Published:2015-01-14 Issue:2 Volume:117 Page:024506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Capriotti M.,Lagger P.,Fleury C.,Oposich M.,Bethge O.,Ostermaier C.,Strasser G.,Pogany D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905945

Reference27 articles.

1. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

2. High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

3. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

4. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

5. Polarization dependent analysis of AlGaN/GaN HEMT for high power applications

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