Ion-channeling study of the SiC/Si/SiO2/Si interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124143
Reference14 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Growth of Crystalline Quality Sic on Thin and Thick Silicon-on-Insulator Structures
3. State of the art of 3C-SiC/silicon on insulators
4. Channeling analysis of strain in superlattices
5. On the Formation of Ultrathin Simox Structures by Low Energy Implantation
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2. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide;Journal of Nuclear Materials;2015-03
3. Disorder accumulation and recovery in gold-ion irradiated 3C-SiC;Journal of Applied Physics;2009-01
4. Self-assembly of well-aligned 3C-SiC ripples by focused ion beam;Applied Physics Letters;2008-05-12
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