GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle-Reference-Cited by-同舟云学术

GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

Published:2016-12-12 Issue:24 Volume:109 Page:241103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yeh P. S.¹,Chang C.-C.¹,Chen Y.-T.¹,Lin D.-W.²,Liou J.-S.¹,Wu C. C.²,He J. H.²,Kuo H.-C.²

Affiliation:

1. Department of Electronic and Computer Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

2. Department of Photonics and the Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972182

Reference18 articles.

1. CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

2. Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

3. Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate

4. Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature

5. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

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