Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Funder
KACST-KAUST-UCSB Solid State Lighting Program (SSLP)
UCSB Solid State Lighting & Energy Electronics Center (SSLEEC)
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/109/4/1.4960001.pdf?itemId=/content/aip/journal/apl/109/4/10.1063/1.4960001&mimeType=pdf&containerItemId=content/aip/journal/apl
Reference42 articles.
1. Strain-induced polarization in wurtzite III-nitride semipolar layers
2. Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures
3. Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
4. Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers
5. High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
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