Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

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Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors

Published:2019-04-21 Issue:15 Volume:125 Page:151614
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lisauskas Alvydas¹²^ORCID,Rämer Adam³,Burakevič Marek¹,Chevtchenko Serguei³,Krozer Viktor²³^ORCID,Heinrich Wolfgang³^ORCID,Roskos Hartmut G.²^ORCID

Affiliation:

1. Institute of Applied Electrodynamics and Telecommunications, Vilnius University, LT-10257 Vilnius, Lithuania

2. Physikalisches Institut, Johann Wolfgang Goethe-Universität, DE-60438 Frankfurt am Main, Germany

3. Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

Lietuvos Mokslo Taryba

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5083838

Reference25 articles.

1. Room-temperature terahertz emission from nanometer field-effect transistors

2. Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect

3. Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems

4. Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano- and Hetero-Structures

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1. Plasmon scattering at a junction in double-layer two-dimensional electron gas plasmonic waveguide;Journal of Physics D: Applied Physics;2024-09-09

2. Optimization of terahertz detectors based on graphene field effect transistors by high impedance antennae;Lithuanian Journal of Physics;2022-12-10

3. Terahertz Electronic Devices;Springer Handbook of Semiconductor Devices;2022-11-11

4. Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content;International Journal of Modern Physics C;2022-06-08

5. Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications;Sensors;2021-11-27

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