Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3603025
Reference27 articles.
1. Phase Change Materials
2. Low-cost and nanoscale non-volatile memory concept for future silicon chips
3. M. Gill, T. Lowrey, and J. Park, Digest of Technical Papers of International Solid-State Circuits Conference, San Francisco, CA (2002), p. 202.
4. Progress of the Phase-change Optical Disk Memory
5. Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses
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